cystech electronics corp. spec. no. : c710n3 issued date : 2013.12.18 revised date : page no. : 1/ 9 MTN2342N3 cystek product specification 16v n-channel enhancement mode mosfet MTN2342N3 bv dss 16v i d @v gs =4.5v 6a v gs= 4.5v, i d =7.2a 15.4m v gs= 2.5v, i d =6.7a 17.2m v gs= 1.8v, i d =6.4a 19.8m r dson(typ) v gs= 1.5v, i d =5.5a 22.5m features v gs= 1.2v, i d =1.3a 26.7m ? low on-resistance ? low voltage gate drive, 1.2v to 5v ? excellent thermal and electrical capabilities ? pb-free lead plating and halogen-free package equivalent circuit outline ordering information device package shipping MTN2342N3-0-t1-g sot-23 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel MTN2342N3 sot-23 d g gate s g s source d drain environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t1 : 3000 pc s / tape & reel,7? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c710n3 issued date : 2013.12.18 revised date : page no. : 2/ 9 MTN2342N3 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v ds 16 gate-source voltage v gs 5 v continuous drain current @ v gs =4.5v, t a =25 c (note 3) 6 continuous drain current @ v gs =4.5v, t a =70 c (note 3) i d 4.8 pulsed drain current (note 1, 2) i dm 30 a t a =25 c 1.25 maximum power dissipation t a =70 c p d 0.8 w operating junction and storage temperature tj, tstg -55~+150 c thermal performance parameter symbol limit unit thermal resistance, junction-to-ambient , max (note 3) r ja 100 c/w thermal resistance, junction-to-case , max r jc 50 c/w note 2. pulse width 300 s, duty cycle 2% : 1. pulse width limited by maximum junction temperature. 3. surface mounted on 1 in2 copper pad of fr-4 board, t 5s; 120c/w at steady state; 417 c/w when mounted on minimum copper pad. electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 16 - - v v gs =0, i d =250 a bv dss / tj - 9 - mv/ reference to 25 , i d =250 a v gs(th) 0.3 0.38 0.8 v v ds =v gs , i d =250 a g fs - 22 - s v ds =4v, i d =7.2a i gss - - 100 na v gs = 5v, v ds =0 - - 1 v ds =12v, v gs =0 i dss - - 10 a v ds =12v, v gs =0, tj=70 c - 15.4 18 v gs =4.5v, i d =7.2a - 17.2 21 v gs =2.5v, i d =6.7a - 19.8 24 v gs =1.8v, i d =6.4a - 22.5 30 v gs =1.5v, i d =5.5a *r ds(on) - 26.7 50 m v gs =1.2v, i d =1.3a dynamic ciss - 1654 - coss - 116 - crss - 115 - pf v ds =10v, v gs =0, f=1mhz *t d(on) - 17 - *t r - 13 - *t d(off) - 37 - *t f - 16 - ns v ds =8v, i d =1a, v gs =4.5v, r g =1
cystech electronics corp. spec. no. : c710n3 issued date : 2013.12.18 revised date : page no. : 3/ 9 MTN2342N3 cystek product specification *qg - 12 - *qgs - 2.3 - *qgd - 3 - nc v ds =8v, i d =6a, v gs =4.5v source-drain diode *i s - - 1.5 *i sm - 30 a *v sd - 0.82 1.2 v v gs =0v, i s =5.8a *trr - 50 - ns *qrr - 26 - nc i f =5.8a, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% recommended soldering footprint
cystech electronics corp. spec. no. : c710n3 issued date : 2013.12.18 revised date : page no. : 4/ 9 MTN2342N3 cystek product specification typical characteristics typical output characteristics 0 5 10 15 20 25 30 012345 v ds , drain-source voltage(v) i d , drain current(a) 5v,4.5v,4v,3.5v,3v,2.5v,2v v gs =1v v gs =1.5v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.001 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =1.2v 1.5v 1.8v 2.5v 4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 04812162 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 012345 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =7.2a drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =4.5v, i d =7.2a r dson @tj=25c : 15.1m typ.
cystech electronics corp. spec. no. : c710n3 issued date : 2013.12.18 revised date : page no. : 5/ 9 MTN2342N3 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =4v pulsed ta=25c gate charge characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0246 qg, total gate charge(nc) v gs , gate-source voltage(v) 8 v ds =8v i d =6a maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 100ms 1ms 100 s r ds( on) limit t a =25c, tj=150, v gs =4.5v r ja =100c/w, single pulse maximum drain current vs junction temperature 0 1 2 3 4 5 6 7 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =4.5v, r ja =100c/w
cystech electronics corp. spec. no. : c710n3 issued date : 2013.12.18 revised date : page no. : 6/ 9 MTN2342N3 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 1 2 3 4 5 6 7 8 9 10 0 0.3 0.6 0.9 1.2 v gs , gate-source voltage(v) i d , drain current (a) v ds =5v single pulse power rating, junction to ambient (note on page 2) 0 1 2 3 4 5 6 7 8 9 10 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja =100c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =100c/w
cystech electronics corp. spec. no. : c710n3 issued date : 2013.12.18 revised date : page no. : 7/ 9 MTN2342N3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c710n3 issued date : 2013.12.18 revised date : page no. : 8/ 9 MTN2342N3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c710n3 issued date : 2013.12.18 revised date : page no. : 9/ 9 MTN2342N3 cystek product specification sot-23 dimension *: typical dim h j k d a l g v c b 3 2 1 s style: pin 1.gate 2.source 3.drain marking: te 3-lead sot-23 plastic surface mounted package cystek package code: n3 2342 inches millimeters inches millimeters min. max. min. max. dim min. max. min. max. a 0.1063 0.1220 2.70 3.10 j 0.0034 0.0079 0.085 0.20 b 0.0472 0.0630 1.20 1.60 k 0.0128 0.0266 0.32 0.67 c 0.0335 0.0512 0.89 1.30 l 0.0335 0.0453 0.85 1.15 d 0.0118 0.0197 0.30 0.50 s 0.0830 0.1161 2.10 2.95 g 0.0669 0.0910 1.70 2.30 v 0.0098 0.0256 0.25 0.65 h 0.0000 0.0040 0.00 0.10 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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